Home / Products / Diode / General Purpose Diode / 1N4007 42MIL 0.6*58MMT/B DO-41

Product Category

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

1N4007 42MIL 0.6*58MMT/B DO-41

5 0 Reviews
Main Specifications/Special Features:

Model: 1N4007 42MIL 0.6*58MMT/B DO-41

Product name: Universal diode



Brand Name: HLAIPOPNY

Packing type: Tape

Diode configuration: Independent

Forward voltage drop (Vf) : 1V

Dc reverse Voltage (Vr) : 1KV

Average rectified current (Io) : 1A

Reverse current (Ir) : 5uA

Description: Forward voltage drop (Vf) : 1V@1A DC reverse voltage withstand (Vr) : 1kV Average rectified current (Io) : 1A
 
Availability:
Quantity:
  • 1N4007 42MIL 0.6*58MMT/B DO-41

  • HLAIPOPNY



*Semiconductor Innovation: The Versatile General-Purpose Diode*

Introducing our game-changing Universal Diode – a pivotal component in the semiconductor landscape. Engineered with exceptional capabilities in reverse biasing and current limiting, this diode embodies the essence of high-performance and unwavering reliability demanded by today's technology.



1*Precision Control for Semiconductors*

Specifically tailored to the stringent requirements of the semiconductor industry, our Universal Diode excels in its reverse biasing function. This feature enables meticulous regulation of electrical currents, ensuring a steady flow that prevents voltage surges and safeguards delicate electronic components from potential harm. It's a critical line of defense for maintaining system integrity and reliability.



2*Enhanced Protection with Current Limiting*

Going beyond standard functionality, our diode incorporates a superior current limiting mechanism. This design element curbs excessive current flow, averting overheating and premature component failure. By incorporating this safeguard, we ensure the prolonged lifespan and durability of your semiconductors, contributing to overall system robustness.



3*Precision Craftsmanship Meets Premium Quality*

Each Reverse Biased General Purpose Diode is meticulously crafted with adherence to the highest quality standards. Our commitment to precision engineering results in a diode that delivers consistent and precise performance, positioning it as a cornerstone component in any professional semiconductor setup.



4*Current Limiting General Purpose Diode: The Professional's Choice*

Select our Universal Diode for your semiconductor applications and harness the dual benefits of precision reverse biasing and effective current limiting. Trust in a product that not only meets but exceeds industry expectations, ensuring your operations are equipped with the finest tools for success. Embrace the future of semiconductor technology with a diode designed to optimize performance and reliability at every turn.

Semiconductor General Diode



Previous: 
Next: 
Home
The company focuses on the packaging and testing of IC chips, semiconductor diodes, triodes, MOSFET tubes, thyristors, three-terminal regulators, bridge stacks and other products.

Product Category

Help

Contact Us


   Vietnam Address: Anyang Industrial Park, Hongfeng Town, Anyang District, Haiphong City
    +84-868359488
   China Address: 14E, Gemdale Zhihui Port, Jiaoping Avenue, Daping, Tangxia Town, Dongguan City, Guangdong Province, China
    +86-18824523083
Leave a Message
Contact Us
Copyright © 2023 Dongguan Hehongyang Electronic Technology Co., Ltd. All rights reserved. Sitemap | Support By Leadong